IRLML6344TRPBF hexfet power mosfet application(s) micro3 tm (sot-23) IRLML6344TRPBF d s g 3 1 2 ? load/ system switch features and benefits benefits v ds 30 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 29 m r ds(on) max (@v gs = 2.5v) 37 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 w c/w a max. 5.0 4.0 -55 to + 150 12 0.01 30 1.3 0.8 25 low r dson (<29m ) lower conduction losses industry-standard sot-23 package multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen results in environmentally friendly msl1, consumer qualification increased reliability product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
d s g electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c ??? 22 29 ??? 27 37 v gs(th) gate threshold voltage 0.5 0.8 1.1 v i dss ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.7 ??? gfs forward transconductance 19 ??? ??? s q g total gate charge ??? 6.8 ??? q gs gate-to-source charge ??? 0.3 ??? q gd gate-to-drain ("miller") charge ??? 2.4 ??? t d(on) turn-on delay time ??? 4.2 ??? t r rise time ??? 5.6 ??? t d(off) turn-off delay time ??? 22 ??? t f fall time ??? 9.1 ??? c iss input capacitance ??? 650 ??? c oss output capacitance ??? 65 ??? c rss reverse transfer capacitance ??? 46 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 10 15 ns q rr reverse recovery charge ??? 3.8 5.7 nc di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = 5.0a, v gs = 0v integral reverse p-n junction diode. v ds = 10v, i d = 5.0a i d = 5.0a i d = 1.0a t j = 25c, v r = 15v, i f =1.3a mosfet symbol showing the v ds =15v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 5.0a v ds = v gs , i d = 10 a v ds =24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c r ds(on) v gs = 2.5v, i d = 4.0a static drain-to-source on-resistance drain-to-source leakage current a m v dd =15v na nc ns pf a 1.3 25 ??? ??? ??? ??? IRLML6344TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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